Published in
IOP Publishing, Journal of Physics D: Applied Physics, 7(49), p. 075108
DOI: 10.1088/0022-3727/49/7/075108
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Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
Journal article published in 2016 by
Tatjana Wegele,
Andreas Beyer,
Peter Ludewig,
Phil Rosenow,
Lennart Duschek,
Kakhaber Jandieri,
Ralf Tonner,
Wolfgang Stolz,
Kerstin Volz
This paper was not found in any repository, but could be made available legally by the author.
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