Direct fabrication of graphene patterns on SiO2/Si substrates was demonstrated using a single-step laser-induced chemical vapor deposition (LCVD) process. A laser beam was used to irradiate a nickel-coated SiO2/Si substrate in a methane-hydrogen environment to induce a local temperature rise on the laser focused area. Followed by a rapid cooling process by moving the laser beam, graphene patterns were formed on the laser scanning pathway. Nickel (Ni) layer under graphene patterns was removed by the Ni etchant diffused into the area under the graphene. Laser direct writing graphene patterns on SiO2/Si substrates was achieved. Energy dispersive X-ray diffraction spectroscopy was used to confirm the removal of Ni layers. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene-based electronic devices.