Published in
American Institute of Physics, Applied Physics Letters, 19(108), p. 192101, 2016
DOI: 10.1063/1.4949489
2016 74th Annual Device Research Conference (DRC)
Links
Tools
Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter
Journal article published in 2016 by
Zhichao Yang 
,
Yuewei Zhang ,
Sriram Krishnamoorthy ,
Digbijoy N. Nath,
Jacob B. Khurgin,
Siddharth Rajan
,
Yuewei Zhang ,
Sriram Krishnamoorthy ,
Digbijoy N. Nath,
Jacob B. Khurgin,
Siddharth Rajan
This paper is available in a repository.
Full text: Download
Data provided by 