Published in
2015 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/iedm.2015.7409831
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- Institute of Electrical and Electronics Engineers
- [research-information.bristol.ac.uk] | PDF
- [research-information.bristol.ac.uk] | PDF
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Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Proceedings article published in 2015 by
P. Moens,
A. Banerjee,
M. J. Uren 
,
M. Meneghini ,
S. Karboyan,
I. Chatterjee,
P. Vanmeerbeek,
M. Casar,
C. Liu,
A. Salih,
E. Zanoni,
G. Meneghesso,
M. Kuball,
M. Tack
,
M. Meneghini ,
S. Karboyan,
I. Chatterjee,
P. Vanmeerbeek,
M. Casar,
C. Liu,
A. Salih,
E. Zanoni,
G. Meneghesso,
M. Kuball,
M. Tack
This paper is available in a repository.
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