Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(37), p. 553-555, 2016
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First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor
Journal article published in 2016 by
Sarra Mhedhbi,
Marie Lesecq,
Philippe Altuntas,
Nicolas Defrance,
Etienne Okada,
Yvon Cordier 
,
Benjamin Damilano ,
Abel Ebongue,
Gemma Tabares Jimenez,
Virginie Hoel
,
Benjamin Damilano ,
Abel Ebongue,
Gemma Tabares Jimenez,
Virginie Hoel
This paper was not found in any repository, but could be made available legally by the author.
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