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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 2(14), p. 69-71, 1993

DOI: 10.1109/55.215111

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Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Journal article published in 1993 by E. Zanoni, E. F. Crabbe, J. M. C., J. M. C. Stork, P. Pavan ORCID, G. Verzellesi, L. Vendrame, C. Canali
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Measurements of the impact-ionization multiplication coefficient M - 1 in advanced Si BJT's up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9 . 10(5) V/cm) are presented. The intrinsic limitations affecting M - 1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M - 1 measurements is pointed out An accurate theoretical prediction of the M - 1 coefficient at collector-base voltages close to BV(CBO) requires that the contribution of holes to impact ionization be properly accounted for.