Published in

Wiley, physica status solidi (c), 2(8), p. 450-452, 2010

DOI: 10.1002/pssc.201000439

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Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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