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Nature Research, Scientific Reports, 1(3), 2013

DOI: 10.1038/srep01239

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III–V quantum light source and cavity-QED on Silicon

Journal article published in 2013 by Issac J. Luxmoore, Romain Toro, Osvaldo Del Pozo-Zamudio ORCID, O. Del Pozo Zamudio, Nicholas A. Wasley, Evgeny A. Chekhovich ORCID, Ana M. Sanchez, R. Beanland, A. M. Fox, Mark (Anthony Mark) Fox, Maurice S. Skolnick ORCID, Huiyun Y. Liu, Alexander I. Tartakovskii
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.