Published in
Elsevier, Microelectronics Journal, 1(23), p. 45-50
DOI: 10.1016/0026-2692(92)90095-i
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A study of ESD- induced defects in high-voltage nMOS and pMOS transistors
Journal article published in 1992 by
Paolo Pavan 
,
Enrico Zanoni,
Bruno Bonati,
Sergio Martion,
Giovanna Dalla Libera
,
Enrico Zanoni,
Bruno Bonati,
Sergio Martion,
Giovanna Dalla Libera
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Abstract
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.