Elsevier, Microelectronics Journal, 1(23), p. 45-50
DOI: 10.1016/0026-2692(92)90095-i
Full text: Unavailable
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.