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SpringerOpen, Nanoscale Research Letters, 10(5), p. 1650-1653, 2010

DOI: 10.1007/s11671-010-9689-8

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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Journal article published in 2010 by S. Bietti, C. Somaschini, E. Sarti, N. Koguchi, S. Sanguinetti, G. Isella ORCID, D. Chrastina, A. Fedorov ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.