Monitoring mixed-field radiation environments is of great importance especially for facilities hosting large particle accelerators. Such facilities make use of monitors that are usually composed of different sensors, each one contributing to the evaluation of the radiation levels throughout the radiation harsh zones and also the effects over electronic devices. In this paper, we characterize our custom SRAM based monitors according to the results we retrieved by irradiating our sensors at the H4IRRAD test facility of CERN. Based on the collected upsets of the SRAMs and also using the given particle fluence of the environment in which these devices were exposed to, we were able to monitor the effectiveness of the monitor with respect to the number of sensing devices (memories), the time and the particle fluence.