Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs - Guo Xing Duan, Jordan Hatchtel, Xiao Shen, En Xia Zhang, Cher Xuan Zhang, Blair R. Tuttle, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Jacopo Franco, Dimitri Linten, Jerome Mitard, Liesbeth Witters, Nadine Collaert, Matthew F. Chisholm - Dissemin

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Institute of Electrical and Electronics Engineers, IEEE Transactions on Device and Materials Reliability, 3(15), p. 352-358, 2015

DOI: 10.1109/tdmr.2015.2442152

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Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

Journal article published in 2015 by Guo Xing Duan, Jordan Hatchtel, Xiao Shen, En Xia Zhang, Cher Xuan Zhang, Blair R. Tuttle, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Jacopo Franco, Dimitri Linten, Jerome Mitard, Liesbeth Witters, Nadine Collaert, Matthew F. Chisholm and other authors.

This paper was not found in any repository, but could be made available legally by the author.

This paper was not found in any repository, but could be made available legally by the author.

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