Published in

Materials Research Society, Materials Research Society Symposium Proceedings, (280), 1992

DOI: 10.1557/proc-280-449

Links

Tools

Export citation

Search in Google Scholar

Structural Characterization of GaP/GaAs/GaP Heterostructure by TEM

Journal article published in 1992 by G. Aragón, S. I. Molina ORCID, R. García
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Red circle
Preprint: archiving forbidden
Green circle
Postprint: archiving allowed
Upload
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

ABSTRACTThe defect structure in a GaP/GaAs/GaP heterostructure deposited on a (001) GaAs substrate with a GaAs buffer layer has been characterized by cross sectional TEM. The buffer layer presents dislocations and (α-δ)-fringe contrast parallel to (001) interface plane. HREM study reveals uniformly distributed amorphous capsules in the first GaP/GaAs buffer layer interface. The dominant defects are microtwins which are propagated into the overall heterostructure. Microtwin density is different in the GaP and GaAs layers.The different stress signs may explain the density difference.