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Published in

Materials Research Society, Materials Research Society Symposium Proceedings, (901), 2005

DOI: 10.1557/proc-0901-ra12-06

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Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD

Journal article published in 2005 by Torben Clausen, Jan-Ingo Flege ORCID, Thomas-H. Schmidt, Jens Falta
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractWe have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films have been determined by the use of scanning electron microscopy, atomic force microscopy and grazing incidence x-ray diffraction. After growth at temperatures between 500°C and 600°C smooth Ge films have been observed, which show a partial strain relaxation. However, increasing the temperature to 700°C, a rough surface with a high density of three-dimensional islands has been found.