Recent fabrication issues encountered during the synthesis of silicon nanocrystals in thin SiO2 films by the technique of ultra-low energy ion implantation and subsequent thermal treatment (ULE-IBS) are presented. The effects of charge neutralization of the implanted species, energy contamination and post-implantation cleaning process on the electrical and structural properties of the processed oxides are described, with emphasis upon the technological options to control them. While much research is still required for industrial exploitation of ULE-IBS in the fabrication of competitive and reproducible memory structures, promising results for prototype devices aiming at low-voltage non-volatile memory applications have been obtained and are here reported.