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American Chemical Society, ACS Nano, 2(10), p. 1716-1717, 2016

DOI: 10.1021/acsnano.5b08198

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Reply to “Comment on ‘Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOxvan der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed’”

Journal article published in 2016 by Jin Sung Kim, Hee Sung Lee, Seongil Im
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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