Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO<sub>3</sub> Resistive Switches
Journal article published in 2014 by
Andrea Gerbi,
Renato Buzio 
,
Alessandro Gadaleta,
Luca Anghinolfi,
Michael Caminale,
Emilio Bellingeri,
Antonio Sergio Siri,
Daniele Marré
,
Alessandro Gadaleta,
Luca Anghinolfi,
Michael Caminale,
Emilio Bellingeri,
Antonio Sergio Siri,
Daniele Marré
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Abstract
Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage-dependent variation of the local barrier height of the nanometric patches could explain the non-ideal behaviour of the resistance switching effects in transition-metal oxide cells.