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IOP Publishing, Japanese Journal of Applied Physics, S3(32), p. 194, 1993

DOI: 10.7567/jjaps.32s3.194

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Photoluminescence Study of CuIn 1- x Ga x Se 2 Mixed Crystals

Journal article published in 1993 by R. Bacewicz, A. Dzierz\cega, R. Trykozko
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Photoluminescence of CuIn1-x Ga x Se2 mixed crystals has been investigated. The emission band maximum shifts towards higher photon energies with increasing excitation intensity indicating the donor-acceptor recombination mechanism. The energies of the shallow defect states have been determined from the thermal quenching curves.