Published in
Wiley, physica status solidi (a) – applications and materials science, 2(213), p. 265-269
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Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices
Journal article published in 2016 by
F. Cerbu,
D. V. Andreev,
J. Lisoni,
L. Breuil,
V. V. Afanas'ev,
A. Stesmans,
M. Houssa 
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