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American Institute of Physics, Applied Physics Letters, 5(105), p. 052401

DOI: 10.1063/1.4892420

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Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

Journal article published in 2014 by A. T. Wong, C. Beekman, H. Guo, W. Siemons, Z. Gai, E. Arenholz, Y. Takamura, T. Z. Ward ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character. ; Comment: http://dx.doi.org/10.1063/1.4892420