Dissemin is shutting down on January 1st, 2025

Published in

IOP Publishing, Japanese Journal of Applied Physics, No. 32(45), p. L843-L845, 2006

DOI: 10.1143/jjap.45.l843

Links

Tools

Export citation

Search in Google Scholar

High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors

Journal article published in 2006 by Masataka Higashiwaki ORCID, Takashi Mimura, Toshiaki Matsui
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO