Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 1(24), p. 442
DOI: 10.1116/1.2140004
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Effect of buried Si∕SiO[sub 2] interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
Journal article published in 2006 by
J. J. Hamilton,
B. Colombeau,
J. A. Sharp,
N. E. B. Cowern,
K. J. Kirkby 
,
E. J. H. Collart,
M. Bersani,
D. Giubertoni
,
E. J. H. Collart,
M. Bersani,
D. Giubertoni
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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