Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 3(23), p. 895
DOI: 10.1116/1.1897706
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Effect of thermal annealing on 120-nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors
Journal article published in 2005 by
Yoshimi Yamashita,
Akira Endoh,
Keiji Ikeda,
Kohki Hikosaka,
Takashi Mimura,
Masataka Higashiwaki 
,
Toshiaki Matsui,
Satoshi Hiyamizu
,
Toshiaki Matsui,
Satoshi Hiyamizu
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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