Published in
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
DOI: 10.1109/wipda.2015.7369305
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Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
Proceedings article published in 2015 by
Enrico Zanoni,
Matteo Meneghini 
,
Gaudenzio Meneghesso,
Davide Bisi,
Isabella Rossetto,
Antonio Stocco
,
Gaudenzio Meneghesso,
Davide Bisi,
Isabella Rossetto,
Antonio Stocco
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