Published in
American Institute of Physics, Journal of Applied Physics, 1(116), p. 014504
DOI: 10.1063/1.4886715
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Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
Journal article published in 2014 by
R. V. Galatage,
D. M. Zhernokletov,
H. Dong,
B. Brennan 
,
C. L. Hinkle,
R. M. Wallace ,
E. M. Vogel
,
C. L. Hinkle,
R. M. Wallace ,
E. M. Vogel
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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