Published in
American Institute of Physics, Applied Physics Letters, 9(102), p. 093503
DOI: 10.1063/1.4794411
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Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire
Journal article published in 2013 by
A. Fontserè,
A. Pérez-Tomás 
,
A. Pérez-Tomás,
M. Placidi,
N. Baron,
S. Chenot,
J. C. Moreno,
S. Rennesson ,
Y. Cordier
,
A. Pérez-Tomás,
M. Placidi,
N. Baron,
S. Chenot,
J. C. Moreno,
S. Rennesson ,
Y. Cordier
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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