Published in
American Institute of Physics, Journal of Applied Physics, 8(108), p. 083510
DOI: 10.1063/1.3490199
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Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
Journal article published in 2010 by
O. Moshe,
D. H. Rich,
S. Birner,
M. Povolotskyi,
B. Damilano 
,
J. Massies
,
J. Massies
This paper was not found in any repository, but could be made available legally by the author.
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