Published in
American Institute of Physics, Journal of Applied Physics, 4(97), p. 043514, 2005
DOI: 10.1063/1.1845575
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Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
Journal article published in 2005 by
A. Uedono,
S. F. Chichibu,
M. Higashiwaki 
,
T. Matsui,
T. Ohdaira,
R. Suzuki
,
T. Matsui,
T. Ohdaira,
R. Suzuki
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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