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American Institute of Physics, Journal of Applied Physics, 2(119), p. 025705

DOI: 10.1063/1.4939889

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Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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