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Wiley, Advanced Materials, 13(28), p. 2547-2554, 2016

DOI: 10.1002/adma.201505113

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Monolithic 3D CMOS Using Layered Semiconductors

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This paper is available in a repository.

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Abstract

Monolithic 3D integrated circuits using transition metal dichalcogenide materials using low temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at ultra-low supply voltage of 150 mV is achieved paving way for high-density, ultra-low-voltage, and ultra-low-power applications.