Published in

American Institute of Physics, Applied Physics Letters, 13(108), p. 132106, 2016

DOI: 10.1063/1.4945431

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High pressure-assisted transfer of ultraclean chemical vapor deposited graphene

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We develop a high pressure-assisted (approximately 1000 kPa) transfer method to remove polymer residues and effectively reduce damages on the surface of graphene. By introducing an ethanol pre-dehydration technique and optimizing temperature, the graphene surface becomes nearly free of residues, and the quality of graphene is improved obviously when temperature reaches 140 °C. The graphene obtained using the high pressure-assisted transfer method also exhibits excellent electrical properties with an average sheet resistance of approximately 290 Ω/sq and a mobility of 1210 cm2/V·s at room temperature. Sheet resistance and mobility are considerably improved compared with those of the graphene obtained using the normal wet transfer method (average sheet resistance of approximately 510 ohm/sq and mobility of 750 cm2/V·s).