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IOP Publishing, Japanese Journal of Applied Physics, 3A(45), p. 1635-1639, 2006

DOI: 10.1143/jjap.45.1635

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1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A GaInNAs bandgap difference confinement (BDC) semiconductor optical amplifier (SOA) utilizing a bandgap difference between an active region and a cladding region for current confinement was developed for the first time. Due to strong current and optical confinements in the lateral direction, this SOA exhibited a 4.3 dB larger chip gain and 2.1 dB smaller fiber coupling loss than the conventional GaInNAs-buried-ridge-stripe (BRS) SOA. In addition, the gain dependence of the GaInNAs-BDC-SOA on temperature was found to be much smaller than that of the conventional InP-based-SOA, and comparable to that of the GaInNAs-BRS-SOA.