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Trans Tech Publications, Materials Science Forum, (815), p. 22-29, 2015

DOI: 10.4028/www.scientific.net/msf.815.22

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Ultrahigh Purity Copper Alloy Target Used Innanoscale ULSI Interconnects

Journal article published in 2015 by Hao Zeng, Chao Lv, Yan Gao, Ting Yi Dong, Yong Hui Wang, Xing Quan Wang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Current ULSI circuits have features with dimensions in the nanoscale region. As the critical dimension shrinks, Cu BEOL systems face reliability impacts. Alloying has been proved to be a promising technique to retard grain boundary electro-migration (EM). In this paper, dilute Cu Alloys such as Cu-Al, Cu-Mn for dual-damascene interconnect applications have been investigated. The alloy chosen principle for nanoscale interconnects has been discussed. The ultrahigh purity copper alloy target properties including purity, alloy composition, grain size and sputtering performance were investigated, to lay the foundation for the application of the large-size ultrahigh purity copper alloy target used for 300mm wafer fabrication. The relationships between deposited film behaviors and sputtering target properties in some applications were also discussed. In order to acquire high quality thin film, the properties of sputtering target such as alloy composition homogeneity, grain size and uniformity et al. have to be well controlled by proper fabrication techniques.