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Wiley, Advanced Materials, 45(27), p. 7412-7419, 2015

DOI: 10.1002/adma.201502404

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Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

This paper is available in a repository.
This paper is available in a repository.

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Abstract

FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff ) in the transistors.