Facet-Mediated Growth of High-Quality Monolayer Graphene on Arbitrarily Rough Copper Surfaces
Journal article published in 2016 by
Hyo Chan Lee,
Sae Byeok Jo,
Eunho Lee,
Min Seok Yoo,
Hyun Ho Kim,
Seong Kyu Lee,
Wi Hyoung Lee,
Kilwon Cho
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Abstract
A synthetic approach for high-quality graphene on rough Cu surfaces via chemical vapor deposition is proposed. High-quality graphene is synthesized on rough Cu surfaces by inducing surface faceting of Cu surfaces prior to graphene growth. The electron mobility of synthesized graphene on the rough Cu surfaces is enhanced to 10 335 cm(2) V(-1) s(-1) .