An alternative explanation for the effect of Ge content on the density of end-of-range defects found in ion implanted relaxed SiGe alloys
Journal article published in 2012 by
A. Belafhaili,
L. Laânab,
P. F. Fazzini,
F. Cristiano,
N. Cherkashin,
G. Benassayag,
A. Claverie
