Published in

American Institute of Physics, Journal of Vacuum Science and Technology B, 4(33), p. 042201, 2015

DOI: 10.1116/1.4922022

Links

Tools

Export citation

Search in Google Scholar

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO