Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 5(33), p. 051208, 2015
DOI: 10.1116/1.4928730
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Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
Journal article published in 2015 by
Shihyun Ahn,
Chen Dong,
Weidi Zhu,
Byung-Jae Kim,
Ya-Hsi Hwang,
Fan Ren,
Stephen J. Pearton,
Gwangseok Yang,
Jihyun Kim,
Erin Patrick,
Brian Tracy,
David J. Smith,
Ivan I. Kravchenko
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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