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Institute of Electrical and Electronics Engineers, IEEE Transactions on Instrumentation and Measurement, 2(44), p. 526-529, 1995

DOI: 10.1109/19.377898

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The (220) lattice spacing of silicon

Journal article published in 1995 by G. Basile, A. Bergamin, G. Cavagnero, G. Mana ORCID, E. Vittone, G. Zosi
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained.