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IOP Publishing, Applied Physics Express, 5(3), p. 054201, 2010

DOI: 10.1143/apex.3.054201

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Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Journal article published in 2010 by Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas (2DEG) channels on freestanding GaN substrates have been developed. The VHFETs exhibited a specific on-resistance (RonA) of 7.6 m Omega cm(2) at a threshold voltage (V(TH)) of -1: 1 V and a breakdown voltage (V(B)) of 672 V. The breakdown voltage and the figure of merit (V(B)(2)/R(on)A) are the highest among those of the GaN-based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and a normally-off operation was achieved with a 10-nm-thick Al(0:2)Ga(0:8)N layer. (C) 2010 The Japan Society of Applied Physics