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American Chemical Society, ACS Nano, 8(9), p. 8312-8320, 2015

DOI: 10.1021/acsnano.5b02785

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Metal Semiconductor Field-Effect Transistor with MoS 2 /Conducting NiO x van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

Journal article published in 2015 by Hee Sung Lee, Seung Su Baik, Kimoon Lee, Sung-Wook Min, Pyo Jin Jeon, Jin Sung Kim, Kyujin Choi, Hyoung Joon Choi, Jae Hoon Kim, Seongil Im
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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