Published in
Elsevier, Microelectronic Engineering, (51-52), p. 165-170
DOI: 10.1016/s0167-9317(99)00468-2
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Anomalous behavior of the pulse transfer characteristic of a selectively doped AlxGa1−xAs/GaAs heterostructure containing deep traps
Journal article published in 2000 by
E. Prokhorov 
,
J. González-Hernández,
N. B. Gorev,
I. F. Kodzhespirova,
Y.-U. A. Kovalenko
,
J. González-Hernández,
N. B. Gorev,
I. F. Kodzhespirova,
Y.-U. A. Kovalenko
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