Elsevier, Optik - International Journal for Light and Electron Optics, 15(124), p. 2128-2130
DOI: 10.1016/j.ijleo.2012.06.063
Full text: Download
a b s t r a c t An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the experimental data with reasonable agreement.