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Elsevier, Optik - International Journal for Light and Electron Optics, 15(124), p. 2128-2130

DOI: 10.1016/j.ijleo.2012.06.063

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Optoelectronic properties of GaAs and AlAs under temperature effect

Journal article published in 2013 by Y. Al Douri, A. H. Reshak ORCID, U. Hashim
This paper is available in a repository.
This paper is available in a repository.

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Abstract

a b s t r a c t An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the experimental data with reasonable agreement.