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Wiley, Advanced Materials Interfaces, 17(2), p. 1500407, 2015

DOI: 10.1002/admi.201500407

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Metal–Insulator Transition Induced by Oxygen Vacancies from Electrochemical Reaction in Ionic Liquid-Gated Manganite Films

This paper is available in a repository.
This paper is available in a repository.

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Abstract

A metal–insulator transition is realized in hole-doped manganite films via ionic liquid gating. This transition is ascribed to the oxygen vacancies originated from the electrochemical reaction between the trace water inside ionic liquids and the manganite films, and the water is an indispensable factor in this process.