The optical properties and structure of a-C:H films were modified by addition of nitrogen into the CH(4)/H(2) deposition mixture. Three films prepared in capacitively coupled rf discharge were compared: (a) hydrogenated diamond like carbon film with hydrogen content of 34% and indentation hardness of 21.7 GPa, (b) hard a-C:H:N film with nitrogen content of 13% and indentation hardness of 18.5 GPa and (c) soft a-C:H:N film with nitrogen content of 10% and indentation hardness of 6.7 GPa. It is shown how the parametrized density of states model describing dielectric response of electronic interband transitions can be applied to modified a-C:H:N and how it can be combined with correct treatment of transmittance measured in infrared range using additional Gaussian peaks in joint density of phonon states. This analysis resulted in determination of film dielectric function in wide spectral range (0.045-30 eV) and provided also information about the density of states of valence and conduction bands and lattice vibrations.