Effects of growth temperature and oxidant feeding time on residual C- and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films

Elsevier, Applied Surface Science, (292), p. 880-885

Journal article published in 2014 by Tae Joo Park, Prasanna Sivasubramani

, Jiyoung Kim

This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Preprint: archiving allowed

Upload

Postprint: archiving forbidden

Published version: archiving forbidden

Policy details

Data provided by