Published in
Elsevier, Physica E: Low-dimensional Systems and Nanostructures, (17), p. 64-67, 2003
DOI: 10.1016/s1386-9477(02)00762-2
Links
Tools
Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
Journal article published in 2003 by
A. Morel,
P. Lefebvre,
T. Taliercio,
T. Bretagnon,
B. Gil,
N. Grandjean,
B. Damilano 
,
J. Massies
,
J. Massies
This paper is available in a repository.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional “pseudo-donor–acceptor pairs”.