Graphene has became a great candidate for electronic and optoelectronic applications because of its excellent electrical, thermal, mechanical and optical properties. In this work, processable graphene oxide solution with diameter up to 50μm was synthesized by modified Hummer method. Spin-coating process was employed to produce the GO thin films on pre-cleaned and hydrophilic glass substrates. Two different reducing agent, hydrazine and hydrogen iodide (HI) vapors, were used to reduce as-prepared GO thin films and convert them into transparent conductive reduced graphene oxide electrodes which can be a great alternative for ITO in optoelectronic systems. Different reducing agents result in different properties of transparent conductive electrode (TCE). At the end, we discussed the difference between RGOHI and RGOHydrazine thin films as TCE. Furthermore, the effect of thermal annealing and GO concentration were examined and discussed in order to obtain the best performance.