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Published in

American Institute of Physics, APL Materials, 9(2), p. 096113, 2014

DOI: 10.1063/1.4896051

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Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H-2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H-2-plasma treatment performed at a substrate temperature of 50 degrees C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.