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Wiley, physica status solidi (c), 3-4(9), p. 631-634, 2011

DOI: 10.1002/pssc.201100394

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Fabrication and properties of etched GaN nanorods

Journal article published in 2011 by Philip Shields ORCID, Maxime Hugues, Jesus Zúñiga-Pérez, Mike Cooke, Mark Dineen, Wang Wang, Federica Causa, Duncan Allsopp
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)